Geometrical effect on dislocation nucleation at crystal surface nanostructures
Author:
Publisher
Elsevier BV
Subject
Applied Mathematics,Computational Mathematics,General Engineering,Analysis
Reference26 articles.
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3. Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures;Gendry;Appl Phys Lett,1995
4. The film surface as the site for spontaneous nucleation of dislocation half-loops in strained heteroepitaxial systems;Wagner;Phys Stat Sol A,1999
5. Atomistic models of dislocation formation at crystal surface ledges in Si1-xGex/Si(100) heteroepitaxial thin films;Gao;Phil Mag A,1999
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