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Applications of a dielectric coating to semiconductor lasers

  • Published:1990-08 Issue:4 Volume:22 Page:245-254
  • ISSN:0030-3992
  • Container-title:Optics & Laser Technology
  • language:en
  • Short-container-title:Optics & Laser Technology

Author:

Chen T.R.,Zhuang Y.,Xu Y.J.,Derry P.,Bar-Chaim N.,Yariv A.,Yu B.,Wang Q.Z.,Zhou Y.Q.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Heterostructure Lasers, Part A;Casey,1978

2. Ultra-low threshold-graded index separate-confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatings;Derry;Appl Phys Lett,1987

3. Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser;Koren;Appl Phys Lett,1987

4. Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers;Lau;Appl Phys Lett,1988

5. InGaAsP/InP buried crescent laser diode emitting at 1.3μm wavelength;Oomura;IEEE Journ Quant Elec,1984

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