Amorphous Semiconductors: Electronic Transport-Reference-Cited by-同舟云学术

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Amorphous Semiconductors: Electronic Transport

Published:2001 Issue: Volume: Page:270-277
ISSN:
Container-title:Encyclopedia of Materials: Science and Technology
language:
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Author:

Overhof H.,Thomas P.

Publisher

Elsevier

Reference23 articles.

1. Model for the electronic structure of amorphous semiconductors;Anderson;Phys. Rev. Lett,1975

2. Electrical Properties of boron-doped a-Si;Beyer,1977

3. Temeprature shift of the Fermi level in n-type amorphous silicon;Beyer,1977

4. Transport properties of compensated a-Si:H films;Beyer;J. Phys. (Paris),1981

5. Transport properties of doped amorphous silicon;Beyer;Solid State Comm,1979

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resistance fluctuations in hydrogenated amorphous silicon: Nonthermal equilibrium;Physical Review B;1998-08-15

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