Drift effects in transition metal gate MOS and MISFETs-Reference-Cited by-同舟云学术

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Drift effects in transition metal gate MOS and MISFETs

Published:1993-08 Issue:1-3 Volume:15 Page:238-242
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Robins Ian

Publisher

Elsevier BV

Reference11 articles.

1. A study of Pd/Si MIS Schottky barrier diode hydrogen detector

2. Transition metal-gate MOS gaseous detectors

3. Hydrogen sensitive mos-structures

4. Physics with catalytic metal gate chemical sensors

5. Fundamentals of Silicon Integrated Device Technology;Burger,1967

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1. Experimental and modeling studies of acetylene detection in hydrogen/acetylene mixtures on PdM bimetallic metal–insulator–semiconductor devices;Sensors and Actuators B: Chemical;2011-08

2. On the application of gold based SPR sensors for the detection of hazardous gases;Sensors and Actuators B: Chemical;2010-08

3. Selective acetylene detection through surface modification of metal–insulator–semiconductor sensors with alkanethiolate monolayers;Sensors and Actuators B: Chemical;2009-03

4. Profiling of hydrogen in metal-insulator-semiconductor sensors using neutron reflectivity;Applied Physics Letters;2008-04-14

5. Application of polymer-coated metal-insulator-semiconductor sensors for the detection of dissolved hydrogen;Applied Physics Letters;2006-06-05

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