A novel description of ISFET sensitivity with the buffer capacity and double-layer capacitance as key parameters-Reference-Cited by-同舟云学术

A novel description of ISFET sensitivity with the buffer capacity and double-layer capacitance as key parameters

Published:1995-03 Issue:1-3 Volume:24 Page:201-205
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

van Hal R.E.G.,Eijkel J.C.T.,Bergveld P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference10 articles.

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2. Basic properties of the electrolyte-SiO-Si2 system: physical and theoretical aspects;Sui;IEEE Trans. Electron Devices, ED-26,1979

3. Site-binding model of the electrical double layer at the oxide/water interface;Yates;J. Chem. Soc. Faraday Trans.,1974

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