Author:
Aoucher M.,Mohammed-Brahim T.,Bodin C.,Mencaraglia D.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Si(111) surface oxidation: O1s core-level study using synchrotron radiation;Hollinger;Surf. Sci.,1986
2. Oxygen adsorption on Si(111) in different modifications: 7 × 7, 1-1, Ni and sputtered;Morgan;Surf. Sci.,1985
3. Metastable molecular precursor for the dissociative adsorption of oxygen on Si(111);Hofer;Phys. Rev. Lett.,1985
4. Adsorption of molecular oxygen on Si(111);Hofer;Surf. Sci.,1989
5. Desorption energy of oxygen adsorbed on unintentionally doped low pressure chemical vapor deposited silicon films;Mostefa;Proc. Polycrystalline Semiconductors III Conf., Saint-Malo, France,1993
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献