PECVD silicon oxynitride: A new insulator for ISFETs with insulator surface modified by chemical grafting-Reference-Cited by-同舟云学术

PECVD silicon oxynitride: A new insulator for ISFETs with insulator surface modified by chemical grafting

Published:1991-06 Issue:3-4 Volume:4 Page:385-389
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Chovelon J.M.,Jaffrezic-Renault N.,Clechet P.,Cros Y.,Fombon J.J.,Baraton M.I.,Quintard P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Analysis of the response of ion-sensing FETs, with a chemically modified gate insulator;Perrot;J. Electrochem. Soc.,1990

2. Influence of helium dilution on physico-chemical and defect properties of PECVD silicon oxynitride films;Michailos;Appl. Surface Sci.,1989

3. Connaissance chimique et structurale des gels de silice greffés et confrontation avec la chromatographie en phase liquide;Rosset;Analusis,1987

4. Note of the preparation of alkyl- and oxaalkyl-dimethylsilanols;Boksany;Helv. Chim. Acta,1976

5. The preparation of chem-FET selective gates by thin silica layers grafting and their behaviour;Bataillard;Sensors and Actuators,1987

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