Molecular dynamics simulations of the atomistic structure of the intergranular film between silicon nitride grains: Effect of composition, thickness, and surface vacancies-Reference-Cited by-同舟云学术

Molecular dynamics simulations of the atomistic structure of the intergranular film between silicon nitride grains: Effect of composition, thickness, and surface vacancies

Published:2006-04 Issue:1-2 Volume:422 Page:115-122
ISSN:0921-5093
Container-title:Materials Science and Engineering: A
language:en
Short-container-title:Materials Science and Engineering: A

Author:

Garofalini Stephen H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference43 articles.

1. Calcium Concentration Dependence of the Intergranular Film Thickness in Silicon Nitride

2. Grain-Boundary Microstructure and Chemistry of a Hot Isostatically Pressed High-Purity Silicon Nitride

3. Dopant Distribution in Grain-Boundary Films in Calcia-Doped Silicon Nitride Ceramics

4. Statistical Analysis of the Intergranular Film Thickness in Silicon Nitride Ceramics

5. Grain Boundary Films in Rare-Earth-Glass-Based Silicon Nitride

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