Electric field profile and electron drift velocities in lithium drifted silicon
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference10 articles.
1. Technique and Apparatus for Determining the Response of Scintillators and Semiconductors to Low Energy X-Ray Excitation
2. Accurate determination of the ionization energy in semiconductor detectors
3. Response of Lithium-Drifted Silicon Radiation Detectors to High Energy Charged Particies
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Voltage-dependent reverse current in high resistivity silicon surface-barrier diodes;Nuclear Instruments and Methods;1974-01
2. Temperature dependence of electron drift velocity in silicon;Journal of Applied Physics;1973-05
3. Measurement of the Electron Velocity-Field Characteristics in Germanium Using a New Technique;Physical Review B;1973-03-15
4. The shape distribution of pulses from a planar Ge(Li) detector studied by a differential pulse-shape selection method;Nuclear Instruments and Methods;1972-04
5. Properties of Ion-Implanted Silicon Detectors;IEEE Transactions on Nuclear Science;1972
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