Analysis of boron predeposited silicon wafers by combined ion beam techniques and X-ray microanalysis-Reference-Cited by-同舟云学术

Analysis of boron predeposited silicon wafers by combined ion beam techniques and X-ray microanalysis

Published:1978-02 Issue:1-3 Volume:149 Page:653-658
ISSN:0029-554X
Container-title:Nuclear Instruments and Methods
language:en
Short-container-title:Nuclear Instruments and Methods

Author:

Armigliato A.,Bentini G.G.,Ruffini G.,Battaglin G.,Della Mea G.,Drigo A.V.

Publisher

Elsevier BV

Subject

General Medicine

Reference14 articles.

1. Solid Solubility and Diffusion Coefficients of Boron in Silicon

2. Interface Reactions of B[sub 2]O[sub 3]-Si System and Boron Diffusion into Silicon

3. A. Armigliato, D. Nobili, P. Ostoja, M. Servidori and S. Solmi, in Semiconductor silicon 1977 (eds. H. R. Huff and E. Sirtl; The Electrochemical Society, Inc. Princeton, New Jersey) p. 638.

4. Auger investigation of boron‐doped SiO2/Si

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