Response of silicon surface barrier detectors to heavy ions
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference8 articles.
1. Performance and Modifications of a 200 keV Heavy Ion Accelerator Facility
2. Energy Dependence of Proton Damage in Silicon
3. Response of Silicon Surface Barrier Detectors to Hydrogen Ions of Energies 25 to 250 KEV
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1. Detection of highly ionizing particles: Nonlinear near-surface phenomena in silicon radiation detectors;Physics of Particles and Nuclei;2013-01
2. A Linear Mode Avalanche Photodiode for Ion Detection in the Energy Range 5–250 keV;IEEE Transactions on Nuclear Science;2012-10
3. Energy Loss by keV Ions in Silicon;Physical Review Letters;2004-05-24
4. Beta-decay of 20Mg;Nuclear Physics A;1995-02
5. Response of a passivated implanted planar silicon (PIPS) detector for heavy ions with energies between 25 and 360 keV;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1993-12
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