Ge(Li) detectors with highly compensated intrinsic regions-Reference-Cited by-同舟云学术

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Ge(Li) detectors with highly compensated intrinsic regions

Published:1972-05 Issue:1 Volume:101 Page:61-66
ISSN:0029-554X
Container-title:Nuclear Instruments and Methods
language:en
Short-container-title:Nuclear Instruments and Methods

Author:

Grahmann H.,Kalbitzer S.

Publisher

Elsevier BV

Subject

General Medicine

Reference11 articles.

1. Characteristics of p‐i‐n Junctions Produced by Ion‐Drift Techniques in Silicon

2. An experimental study of the accuracy of compensation in lithium drifted germanium detectors

3. The theory of compensation in lithium drifted semiconductor detectors

4. On the accuracy of acceptor compensation by lithium ion drift

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3 Semiconductor Detectors;Experimental Techniques in Nuclear Physics;1997-12-31

2. Electrical field distribution and the charge collection process in not-ideally compensated coaxial Ge(Li) detectors;Nuclear Instruments and Methods;1978-10

3. Determination of the electric-field distribution in coaxial Ge(Li) detectors with the help of the C−V characteristics of the detector;Nuclear Instruments and Methods;1975-04

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