Application of epitaxial crystal growth on silicon radiation detectors

Author:

Husimi K.,Ohkawa S.,Kim C.,Osada S.,Shiraishi F.

Publisher

Elsevier BV

Subject

General Engineering

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Spectral characterization of yeast cells with an epitaxy-based UV-Vis optical sensor;Biomedical Microdevices;2006-06

2. The response and calibration of thin Si ΔE detectors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-10

3. Extremely thin silicon ΔE detectors for ion beam analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03

4. Fabrication of an integrated ΔE-E-silicon detector by wafer bonding using cobalt disilicide;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1997-06

5. Thin epitaxial silicon detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1990-03

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