Ion implant gettering of generation impurities in silicon investigated using PIXE and Rutherford backscattering spectrometry-Reference-Cited by-同舟云学术

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Ion implant gettering of generation impurities in silicon investigated using PIXE and Rutherford backscattering spectrometry

Published:1981-12 Issue:1-3 Volume:191 Page:63-69
ISSN:0167-5087
Container-title:Nuclear Instruments and Methods in Physics Research
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Golja B.,Nassibian A.G.,Cohen D.

Publisher

Elsevier BV

Subject

General Engineering

Reference16 articles.

1. Ion implantation in semiconductors and other materials;Seidel,1973

2. Metal Precipitates in Silicon p‐n Junctions

3. Gettering rates of various fast‐diffusing metal impurities at ion‐damaged layers on silicon

4. The use of PIXE for the measurement of thorium and uranium at μgg−1 levels in thick ore samples

5. Analytical application of particle induced X-ray emission

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of Gettering Techniques by Means of Intentional Quantitative Cu Contamination;Japanese Journal of Applied Physics;1988-07-20

2. Specific applications of a 350 kv ion accelerator for PIXE analysis of solid state samples;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1984-04

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