Depth profiling of oxygen in oxidized ceramic Si3N4 with the backscattering technique-Reference-Cited by-同舟云学术

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Depth profiling of oxygen in oxidized ceramic Si3N4 with the backscattering technique

Published:1977-09 Issue:2 Volume:145 Page:347-351
ISSN:0029-554X
Container-title:Nuclear Instruments and Methods
language:en
Short-container-title:Nuclear Instruments and Methods

Author:

Lombaard J.M.,Meyer O.

Publisher

Elsevier BV

Subject

General Medicine

Reference15 articles.

1. Microanalysis by the direct observation of nuclear reactions using a 2 MeV Van de Graaff

2. Use of the nuclear reaction 16O(d,α)14N in the microanalysis of oxide surface layers

3. High resolution depth profiling of oxygen and carbon in materials by spectral deconvolution

4. Analysis of amorphous layers on silicon by backscattering and channeling effect measurements

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface oxidation of silicon carbide platelets as studied by x-ray photoelectron spectroscopy and bremsstrahlung-excited Auger electron spectroscopy;Surface and Interface Analysis;1992-02

2. Creep and Internal Oxidation of Reaction Bonded Silicon Nitride;Progress in Nitrogen Ceramics;1983

3. Energy levels of light nuclei A = 16–17;Nuclear Physics A;1982-02

4. Interaction between creep, oxidation and microporosity in reaction-bonded silicon nitride;Ceramurgia International;1980-04

5. A new method in deriving the accurate thin layer thickness from the backscattered ion spectrum;Nuclear Instruments and Methods;1979-01

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