Electrical properties and atomic distribution studies in ion implanted InP
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference14 articles.
1. Ion‐implantedn‐ andp‐type layers in InP
2. N-type doping of indium phosphide by implantation
3. Ion-implanted p–n junction indium-phosphide impatt diodes
4. High-resistivity layers in n-InP produced by Fe ion implantation
5. Gallium Arsenide and Related Compounds;Devlin,1979
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere;Physical Review B;1999-01-15
2. Si acceptor excited states in ion‐implanted InP;Journal of Applied Physics;1995-10-15
3. Structural and electrical properties of Si‐ and Se‐implanted InP layers;Journal of Applied Physics;1994-04-15
4. Photoluminescence studies of Si‐implanted InP;Journal of Applied Physics;1989-10-15
5. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
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