The depth and angular dependence of the mid-channel flux of He ions in Al crystals
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference13 articles.
1. Anomalously high yields of elastically scattered12C-ions from Zr, Hf, Tl, and Hg atoms implanted into silicon
2. The use of channeling-effect techniques to locate interstitial foreign atoms in silicon
3. On the spatial distribution of channelled ions
4. Flux enhancement and lattice site location
5. Channeling;Davies,1973
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Resonant gamma-ray yields from the15N(p, alpha-gamma)12C reaction as a function of channeled proton energy and nb-0.2 at.%15N crystal orientation;Radiation Effects;1985-01
2. Lattice defects in ion-implanted aluminium studied by means of perturbed angular correlations;Hyperfine Interactions;1984-11
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