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A comparison of the radiation damage of electronic components irradiated in different radiation fields

  • Published:1975-12 Issue:1 Volume:130 Page:291-300
  • ISSN:0029-554X
  • Container-title:Nuclear Instruments and Methods
  • language:en
  • Short-container-title:Nuclear Instruments and Methods

Author:

Lambert K.P.,Schönbacher H.,Van de Voorde M.

Publisher

Elsevier BV

Subject

General Medicine

Reference7 articles.

1. S. Battisti et al., Radiation damage of electronic components, CERN Report in preparation.

2. Studium der Strahlenschäden an Hochenergiebeschleuniger Bauteilen durch Bestrahlung in einem Kernreactor;Schönbacher;CERN Lab. II-RA/PP/74-5,1974

3. Megarad dosimetry;Van de Voorde;CERN 69-12,1969

4. High radiation dose luminescent and optical dosimetry systems

5. Proc. Intern. Conf. on Evaluation of space environment on materials;Lambert,1974

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation Dosimeters for High Dose by Commercial PMOS Transistors Using Normalized Drain Current as Dosimetric Parameter;Journal of Nuclear Science and Technology;1997-10

2. Damage induced in silicon by backscattered electrons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-03

3. Electrical Insulation and Fusion Reactors;Advances in Nuclear Science and Technology;1984

4. A Survey of Aging of Electronics with Application to Nuclear Power Plant Instrumentation;IEEE Transactions on Nuclear Science;1983

5. Radiation damage to electronic components;Nuclear Instruments and Methods;1976-08
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