Calculation of gamma-ray pulse height spectrum in a semiconductor detector in the presence of charge carrier trapping-Reference-Cited by-同舟云学术

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Calculation of gamma-ray pulse height spectrum in a semiconductor detector in the presence of charge carrier trapping

Published:1971-05 Issue:2 Volume:93 Page:341-348
ISSN:0029-554X
Container-title:Nuclear Instruments and Methods
language:en
Short-container-title:Nuclear Instruments and Methods

Author:

Bell R.O.

Publisher

Elsevier BV

Subject

General Medicine

Reference10 articles.

1. Cadmium telluride, grown from tellurium solution, as a material for nuclear radiation detectors

2. Gamma Response of Semi‐insulating Material in the Presence of Trapping and Detrapping

3. Evaluation of CdTe by Nuclear Particle Measurements

4. Nuclear Detectors from Cadmium Telluride Grown from a Tellurium Solvent

5. Charge Collection Efficiencies for Lithium-Drifted Silicon and Germanium Detectors in the X-Ray Energy Region

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of a nuclear radiation detector using the PbI/sub 2/ crystal and its response characteristics for gamma-rays;IEEE Transactions on Nuclear Science;1998-06

2. Radiation detectors;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997

3. Fabrication of radiation detector using PbI/sub 2/ crystal;IEEE Transactions on Nuclear Science;1995-08

4. Chapter 14 Electronics for X-Ray and Gamma Ray Spectrometers;Semiconductors for Room Temperature Nuclear Detector Applications;1995

5. Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors;Journal of Crystal Growth;1994-04

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