Deep levels in implanted, pulse-laser-annealed GaAs-Reference-Cited by-同舟云学术

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Deep levels in implanted, pulse-laser-annealed GaAs

Published:1981-04 Issue: Volume:182-183 Page:699-703
ISSN:0029-554X
Container-title:Nuclear Instruments and Methods
language:en
Short-container-title:Nuclear Instruments and Methods

Author:

Yuba Yoshihiko,Gamo Kenji,Oraby Ahmed H.,Murakami Kouichi,Namba Susumu

Publisher

Elsevier BV

Subject

General Medicine

Reference15 articles.

1. AIP Conf. Proc. Ser. No. 50,1979

2. Mater. Res. Soc. Symp. Laser and Electron Beam Processing;Kimerling,1979

3. IBMM-78;Kachurin,1979

4. Laser‐irradiation effects on unencapsulated GaAs studied by capacitance spectroscopy

5. Mat. Res. Soc. Symp. Laser and Electron Beam Processing;Gamo,1979

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989

2. Photoluminescence of Ion-Implanted Gallium Arsenide After Laser Annealing;Ion Implantation: Equipment and Techniques;1983

3. Effects of Pulsed Laser Irradiation on the Electrical Properties of GaAS;Cohesive Properties of Semiconductors under Laser Irradiation;1983

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