A deterministic mechanic model for predicting the strain energy across the wafer bonding process coupling the effects of normal pressure and wafer geometry-Reference-Cited by-同舟云学术

A deterministic mechanic model for predicting the strain energy across the wafer bonding process coupling the effects of normal pressure and wafer geometry

Published:2023-04 Issue: Volume:267 Page:112164
ISSN:0020-7683
Container-title:International Journal of Solids and Structures
language:en
Short-container-title:International Journal of Solids and Structures

Author:

Jiang Jiahao,Sun Yunyun^ORCID

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Applied Mathematics,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Modeling and Simulation

Reference28 articles.

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5. Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate[J];Huang;Results in Physics,2021

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