Field-effect transistors using Langmuir–Blodgett films of neutral long-chain TCNQ derivatives-Reference-Cited by-同舟云学术

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Field-effect transistors using Langmuir–Blodgett films of neutral long-chain TCNQ derivatives

Published:2005-05 Issue: Volume:257-258 Page:381-384
ISSN:0927-7757
Container-title:Colloids and Surfaces A: Physicochemical and Engineering Aspects
language:en
Short-container-title:Colloids and Surfaces A: Physicochemical and Engineering Aspects

Author:

Ohnuki Hitoshi,Ikegami Keiichi,Ida Tetsuya,Izumi Mitsuru

Publisher

Elsevier BV

Subject

Colloid and Surface Chemistry

Reference17 articles.

1. Molecular beam deposited thin films of pentacene for organic field effect transistor applications

2. Langmuir-Blodgett films

3. Observation of metallic conductivity down to 14 K in Langmuir-Blodgett films based on BEDO-TTF and behenic acid

4. Formation of two-dimensional weak localization in conducting Langmuir-Blodgett films

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unique supramolecular assembly through Langmuir – Blodgett (LB) technique;Heliyon;2018-12

2. Stereo-Electronic Effects in Tunneling Junctions: Revisiting the Platform;Procedia Engineering;2016

3. Effects of interfacial modification on the performance of an organic transistor based on TCNQ LB films;Thin Solid Films;2008-03

4. Control of Crystal Morphology of Aromatic Electron Donors and Acceptors for Organic Electronics;Japanese Journal of Applied Physics;2008-02-15

5. Air-stable ambipolar field-effect transistors based on copper phthalocyanine and tetracyanoquinodimethane;Research on Chemical Intermediates;2008-02

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