Crystallization kinetics in glassy Se80−xTe20Inx alloys
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. High-field conduction in a-Se80Te20 and a-Se80Te10M10 (M=Ag, Cd or Sb)
2. Steady state photoconductivity in amorphous thin films of Se80Te10M10 (M = Cd, In, Sb)
3. Dielectric properties of glassy Se80Te20 and Se 80Te10M10 (M = Cd, In and Sb)
4. Kinetics of Phase Change. II Transformation‐Time Relations for Random Distribution of Nuclei
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1. Structural characterization of light-induced crystal growth in Se98Sb2 chalcogenide glass;Journal of Non-Crystalline Solids;2012-02
2. On the crystallization kinetics of In additive Se–Te chalcogenide glasses;Thermochimica Acta;2011-01
3. Observation of compensation effect for isothermal crystallization in glassy Se80−x Ge20Inx and Se78−x Ge22Bix alloys;Russian Physics Journal;2008-03
4. Pre-exponential factor of Arrhenius equation for the isothermal crystallization of some Se–Ge, Se–In and Se–Te chalcogenide glasses;Journal of Materials Science;2006-11-14
5. Observation of compensation effect for isothermal crystallization in glassy Se80−xGe20Inxand Se78−xGe22Bixalloys;Physica Scripta;2006-10-17
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