Hall effect and magnetoresistance in UNiSn-Reference-Cited by-同舟云学术

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Hall effect and magnetoresistance in UNiSn

Published:1993-05 Issue: Volume:186-188 Page:708-710
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Diehl J.,Fischer H.,Köhler R.,Geibel C.,Steglich F.,Maeda Y.,Takabatake T.,Fujii H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Magnetic and electrical properties of several equiatomic ternary U-compounds

2. Gap at Fermi level in some new d- and f-electron intermetallic compounds

3. Anomalous Magnetic, Transport and Thermal Properties in the Half-Metallic Magnet UNiSn

4. Electronic band structure of ThNiSn

5. Unusual magnetic and lattice transformation in UNiSn, a possible half‐metallic ferromagnetic system

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magneto-transport properties of cubic NiMnAs film epitaxied on GaAs (110) substrate;Journal of Physics: Condensed Matter;2021-06-14

2. Topological Insulator-to-Weyl Semimetal Transition in Strongly Correlated Actinide System UNiSn;Physical Review X;2019-12-16

3. Transport properties of the ferromagnetic Heusler alloyCo2TiSn;Physical Review B;2005-07-25

4. Resonant photoemission spectroscopy study of UTSn (T=Ni,Pd);Journal of Magnetism and Magnetic Materials;2004-05

5. Electronic structures of UTSn (T = Ni, Pd) using photoemission spectroscopy;Journal of Physics: Condensed Matter;2004-04-24

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