Electronic structure, surface composition and long-range order in GaN-Reference-Cited by-同舟云学术

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Electronic structure, surface composition and long-range order in GaN

Published:1993-04 Issue:1-4 Volume:185 Page:415-421
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Hunt R.W.,Vanzetti L.,Castro T.,Chen K.M.,Sorba L.,Cohen P.I.,Gladfelter W.,Van Hove J.M.,Kuznia J.N.,Khan M.Asif,Franciosi A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Prospects for device implementation of wide band gap semiconductors

2. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

3. Raman scattering in AlxGa1−xN alloys

4. Band Structure and Reflectivity of GaN

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1. Prediction of ferromagnetism in GaN:Ag and SiC:Ag nanotubes;Advances in Natural Sciences: Nanoscience and Nanotechnology;2024-08-28

2. Emission enhancement of GaN field emitter arrays in an N2 environment;Journal of Vacuum Science & Technology B;2024-07-01

3. Doping effect on electronic and magnetic properties of Ag-doped single-walled (6,0) GaN nanotubes: First-principles study;Solid State Sciences;2024-03

4. Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces;Coatings;2021-01-28

5. The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001);Acta Physica Polonica A;2019-10

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