Diamagnetic and dielectric susceptibilities of III–V nitride compound semiconductors-Reference-Cited by-同舟云学术

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Diamagnetic and dielectric susceptibilities of III–V nitride compound semiconductors

Published:1991-09 Issue:3 Volume:173 Page:257-264
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Sahu T.,Nayak S.K.,Acharya R.N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. XXVIII. The electronic structure of diamond

2. The electronic structure of diamond, silicon and germanium

3. The Nature of the Chemical Bond;Pauling,1960

4. The electronic properties of tetrahedral intermetallic compounds I. Charge distribution

5. Electronic Properties of an Amorphous Solid. I. A Simple Tight-Binding Theory

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1. Axisymmetric scalable magneto-gravitational trap for diamagnetic particle levitation;Review of Scientific Instruments;2018-12

2. Third-order nonlinear optical susceptibility of wide-bandgap nitrides;Semiconductor Science and Technology;1997-05-01

3. Optical properties of cubic boron nitride;Physical Review B;1995-09-15

4. Gallium nitride (GaN) dielectric constants;Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties

5. Aluminum nitride (AlN) dielectric constants;Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties

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