Deposition of amorphous hydrogenated semiconductors by magnetron assisted silane decomposition-Reference-Cited by-同舟云学术

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Deposition of amorphous hydrogenated semiconductors by magnetron assisted silane decomposition

Published:1991-04 Issue:1-4 Volume:170 Page:571-573
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Marakhonov V.I.,Rogachev N.A.,Terukov E.I.,Ishkalov J.T.,Trapeznikova I.N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference1 articles.

1. Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and optical properties of a-Si:H, a-SiGe:H and a-SiSn:H deposited by magnetron assisted silane decomposition;Journal of Non-Crystalline Solids;1991-01

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