High-quality single-crystal growth and Fermi surface properties of UGe2-Reference-Cited by-同舟云学术

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High-quality single-crystal growth and Fermi surface properties of UGe2

Published:1993-05 Issue: Volume:186-188 Page:129-131
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Yun S.W.,Satoh K.,Fujimaki Y.,Umehara I.,Ōnuki Y.,Takayanagi S.,Aoki H.,Uji S.,Shimizu T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. High-Field Magnetism;Menovsky,1983

2. Magnetic and Electrical Properties of U–Ge Intermetallic Compounds

3. High Field Magnetoresistance and de Haas-van AlphenEffect in UGe2

4. de Haas-van Alphen Effect in UGe2

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-quality single crystal growth in heavy fermion compounds;Crystal Growth of Intermetallics;2018-12-17

2. Low-temperature specific heat of uranium germanides;Journal of Magnetism and Magnetic Materials;2014-06

3. Electronic structure of UGe2 at ambient pressure: Comparison with X-ray photoemission spectra;Intermetallics;2011-10

4. Hall effect in the ferromagnetUGe2;Physical Review B;2004-05-26

5. Magnetotransport of compounds in the U-Ge system;Philosophical Magazine B;2002-05-01

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