Band-offset determination at strained II–VI heterojunctions within a self-consistent tight-binding model-Reference-Cited by-同舟云学术

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Band-offset determination at strained II–VI heterojunctions within a self-consistent tight-binding model

Published:1993-09 Issue:1-2 Volume:191 Page:1-15
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Priester C.,Bertho D.,Jouanin C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference96 articles.

1. Proceedings of the International Conference on II–VI Compounds,1990

2. Proceedings of the NATO advanced Research Workshop on Growth and Optical properties of Wide Gap II–VI Low Dimensional Semiconductors,1989

3. Simplified LCAO Method for the Periodic Potential Problem

4. Bond-Orbital Model and the Properties of Tetrahedrally Coordinated Solids

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