Self-aligned in-line tunnel junctions for single-charge electronics-Reference-Cited by-同舟云学术

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Self-aligned in-line tunnel junctions for single-charge electronics

Published:1996-02 Issue:1-4 Volume:218 Page:272-275
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Götz M.,Blüthner K.,Krech W.,Nowack A.,Fuchs H.J.,Kley E.-B.,Thieme P.,Wagner Th.,Eska G.,Hecker K.,Hegger H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Single Charge Tunnelling: Coulomb Blockade Phenomena in Nanostructures;Averin,1992

2. Offset masks for lift‐off photoprocessing

3. Int. Supercond. Electr. Conf.;Koch,1987

4. A DC SQUID with intrinsically shunted submicron junctions near the hysteretic limit exhibiting an extremely large dV/d phi transfer function

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