Volume low frequency dispersion (LFD) in high resistivity ε-GaSe-Reference-Cited by-同舟云学术

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Volume low frequency dispersion (LFD) in high resistivity ε-GaSe

Published:1992-08 Issue:4 Volume:179 Page:278-284
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Anis M.Khalid,Hashmi R.A.,Shahrukh M.U.,Sahba Maqsooda

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Electrical properties ofp-type GaSe

2. Photoconduction in GaSe single crystal

3. New materials for optoelectronic devices: Growth and characterization of indium and gallium chalcogenide layer compounds

4. Electronic structure of MX2-type layered compounds

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis and characterization of (Sb0.05In0.95)Se crystals;Materials Today: Proceedings;2023-02

2. Proton mobility calculations in the presence of negative capacitances;Europhysics Letters (EPL);1998-10-15

3. Negative capacitance effects in semiconductor diodes;Solid State Communications;1998-05

4. Capacitance-voltage behaviour inp-type ɛ-GaSe single crystal ∥c at different temperatures;Il Nuovo Cimento D;1998-02

5. Low frequency dispersion in GaSe thin films;Thin Solid Films;1996-07

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