Valence change and physical properties in semiconducting mixed-valent rare-earth compounds
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Hybridization gap inCe3Bi4Pt3
2. Gap in the magnetic excitation spectrum ofCe3Bi4Pt3
3. Semiconducting properties of the isomorphous compounds, Ce3Au3Sb4 and Ce3Pt3Sb4
4. Localized f-electron antiferromagnetism, heavy fermion behavior and mixed valence in Ce3Au3Sb4, Ce3Pt3Sb4 and related compounds
5. Electronic Band Structure of Th3Ni3Sb4and Th3X4(X=P, As, Sb)
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1. Localized f -electron magnetism in the semimetal Ce3Bi4Au3;Physical Review B;2023-12-11
2. Isoelectronic tuning of heavy fermion systems: Proposal to synthesize Ce3Sb4Pd3;Physical Review B;2020-01-13
3. Semiconducting behaviour of Ce3 Cu3 Sb4 revisited;Journal of Alloys and Compounds;2016-01
4. Localized states within the gap of;Physica B: Condensed Matter;2008-04
5. Uniquef-level resonant state within the gap inCe3Au3Sb4single crystals: Magnetic, thermal, and transport properties;Physical Review B;2007-10-03
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