Silicon carbide formation by carbothermal reduction in the Acheson process: A hot model study
Author:
Funder
CSIR, New Delhi, India
IGCAR, Kalpakkam, India
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,Instrumentation
Reference29 articles.
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3. Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition;Wong;Appl. Phys. Lett.,1999
4. The formation and crystal structure of silicon carbide;Taylor;Br. J. Appl. Phys.,1950
5. Study of formation of silicon carbide in the Acheson process;Kumar;Steel Res.,2002
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