1. X-ray quantitative analysis of the phases developed upon air annealing of ZnSe, CdSe, and CdS semiconductors
2. Y. Mizushima, A. Yoshikava, in: Y. Hamakava (Ed.), Amorphous Semiconductors Technology and Devices, OHM, Tokyo, North-Holland, Amsterdam, 1982, p. 277.
3. E. Shepeljavi, A.V. Stronski, I.Z. Indutnyi, in: Proceedings of Ukrainian Vacuum Society, vol. 1, IMF NASU, Kiev, 1995, p. 324.
4. I.Z. Indutnyi, S.A. Kostioukevitch, A.V. Stronski, P.E. Shepeljavi, Optics as a key to High technology, in: T. Lippeny, G. Lupkovitcs, A. Podmaniczky (Eds.), Gy. Akos. Proc. SPIE, vol. 1983, part 1, 1993, p. 464.
5. A.V. Stronski, in: G. Harman, P. Mach (Eds.), Microelectronic Interconnections and Assembly, NATO ASI Series 3: High Technology, vol. 54, 1998, p. 263.