Texture and strain in narrow copper damascene interconnect lines: An X-ray diffraction analysis-Reference-Cited by-同舟云学术

Texture and strain in narrow copper damascene interconnect lines: An X-ray diffraction analysis

Published:2008-10 Issue:10 Volume:85 Page:2175-2178
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kaouache B.,Labat S.,Thomas O.,Maitrejean S.,Carreau V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. J.F. Guillaumond, L. Arnaud, T. Mourier, M. Fayolle, O. Pesci, G. Reimbold, International Interconnect Technology Conference 2002 (IITC 2002), IEEE, San Francisco, CA, pp. 132–134.

2. Influence of line dimensions on the resistance of Cu interconnections

3. Resistivity Increase in Ultrafine-Line Copper Conductor for ULSIs

4. Alteration of Cu conductivity in the size effect regime

5. Influence of surface and grain-boundary scattering on the resistivity of copper in reduced dimensions

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