A simple figure of merit to identify the first layer to degrade and fail in dual layer SiOx/HfO2 gate dielectric stacks-Reference-Cited by-同舟云学术

A simple figure of merit to identify the first layer to degrade and fail in dual layer SiOx/HfO2 gate dielectric stacks

Published:2023-09 Issue: Volume:281 Page:112080
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Padovani Andrea,La Torraca Paolo

Funder

Università Degli Studi di Modena e Reggio Emila

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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4. Accurate model for time dependent dielectric breakdown of high-k metal gate stacks;Nigam,2009

5. Dielectric breakdown in high-k gate dielectrics—Mechanism and lifetime assessment;Okada,2007

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