Selective functionalization of silicon nitride with a water-soluble etch-resistant polymer-Reference-Cited by-同舟云学术

Selective functionalization of silicon nitride with a water-soluble etch-resistant polymer

Published:2023-05 Issue: Volume:276 Page:112001
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Mochida Kenji,Miki Tsubasa,Teranishi Tadashi

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

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2. Miyashita, M.; Kujime, T.; Nii, K. Fine Processing Agent and Fine Processing Method. JP Patent JP5401647B. January 29, 2014.

3. Seki, K.; Goto, T. Cleaning Solution and Method for Cleaning Substrate. US Patent US10920179B2. February, 16, 2021.

4. Selective Wet Etching of Si3N4/SiO2 in Phosphoric Acid with the Addition of Fluoride and Silicic Compounds;Seo,2014

5. Kinetic Effect of Additives in High Temperature Phosphoric Acid on the Etching of Si3N4/SiO2;Park,2019

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