Ti segregation at CoSi grain boundaries-Reference-Cited by-同舟云学术

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Ti segregation at CoSi grain boundaries

Published:2019-01 Issue: Volume:203-204 Page:1-5
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Zschiesche Hannes,Charaï Ahmed,Mangelinck Dominique,Alfonso Claude

Funder

French government through the program ”Investissements d'Avenir A*MIDEX”

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Silicide thin films and their applications in microelectronics

2. Growth of epitaxial CoSi2on (100)Si

3. Formation of epitaxial CoSi2films on (001) silicon using Ti‐Co alloy and bimetal source materials

4. Epitaxial growth of CoSi2on both (111) and (100) Si substrates by multistep annealing of a ternary Co/Ti/Si system

5. Insitux‐ray diffraction study of CoSi2formation during annealing of a Co/Ti bilayer on Si(100)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Co, Pd and Pt ultra-thin films on the Ni-silicide formation: investigating the sandwich configuration;Journal of Materials Science;2022-03

2. Grain boundary in NbCo(Pt)Sn half-Heusler compounds: Segregation and solute drag on grain boundary migration;Acta Materialia;2022-03

3. Methods for Gibbs triple junction excess determination: Ti segregation in $$\hbox {CoSi}_2$$ thin film;Journal of Materials Science;2020-06-17

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