High-energy proton irradiation effects on tunnelling MOS capacitors-Reference-Cited by-同舟云学术

High-energy proton irradiation effects on tunnelling MOS capacitors

Published:2004-04 Issue:1-4 Volume:72 Page:85-89
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Fleta C,Campabadal F,Rafı́ J.M,Lozano M,Ullán M

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB)

2. Ionizing radiation induced leakage current on ultra-thin gate oxides

3. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

4. Does short wavelength lithography process degrade the integrity of thin gate oxide?

5. X-ray irradiation effect on the reliability of ultra-thin gate oxides and oxynitrides

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4. Comparative Analysis of MIS Capacitance Structures With High-k Dielectrics Under Gamma, $^{16}$O and p Radiation;IEEE Transactions on Nuclear Science;2012-08

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