Performance and reliability of advanced High-K/Metal gate stacks (Invited Paper)-Reference-Cited by-同舟云学术

Performance and reliability of advanced High-K/Metal gate stacks (Invited Paper)

Published:2009-07 Issue:7-9 Volume:86 Page:1609-1614
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Garros X.,Casse M.,Reimbold G.,Rafik M.,Martin F.,Andrieu F.,Cosnier V.,Boulanger F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics

2. C. Leroux, J. Mitard, G. Ghibaudo, X. Garros, G. Reimbold, F. Martin, in: IEDM Technical Digest, San Francisco, 2004, p. 737.

3. Effects of ALD HfO2 thickness on charge trapping and mobility

4. A. Neugroschel, G. Bersuker, R. Choi, C. Cochrane, P. Lenahan, D. Heh, C. Young, C.Y. Kang, B.H. Lee, R. Jammy, IEDM Technical Digest, San Francisco, 2006, p. 1.

5. X. Garros, P. Besson, G. Reimbold, V. Loup, T. Salvetat, N. Rochat, S. Lhostis, F. Boulanger, in: Proceedings of the International Reliability Physics Symposium, Phoenix, 2007, p. 330.

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