A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium
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Published:2008-07
Issue:7
Volume:85
Page:1490-1494
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ISSN:0167-9317
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Container-title:Microelectronic Engineering
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language:en
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Short-container-title:Microelectronic Engineering
Author:
Wu Dake,Huang Ru,Bu Weihai,Zhou Falong,Tian Yu,Chen Baoqin,Feng Chuguang,Chan Mansun,Wang Yangyuan
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Scaling towards 35 nm gate length CMOS;Yu;Symp. VLSI Tech. Dig.,2001