Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal–insulator–semiconductor field-effect-transistors-Reference-Cited by-同舟云学术

Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal–insulator–semiconductor field-effect-transistors

Published:2011-12 Issue:12 Volume:88 Page:3459-3461
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Miyata Noriyuki,Ishii Hiroyuki,Urabe Yuji,Itatani Taro,Yasuda Tetsuji,Yamada Hisashi,Fukuhara Noboru,Hata Masahiko,Deura Momoko,Sugiyama Masakazu,Takenaka Mitsuru,Takagi Shinichi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

2. Electrical Properties of (CaSr)F2/GaAs(111)B Interfaces Grown by Molecular Beam Epitaxy: Realization of Unpinning

3. T. Yasuda, N. Miyata, H. Ishii, T. Itatani, O. Ichikawa, N. Fukuhara, M. Hata, A. Ohtake, T. Haimoto, T. Hoshii, M. Takenaka, S. Takagi, 39th IEEE Semiconductor Interface Specialist Conference, P.7 (San Diego, 2008).

4. High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

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