Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devicesapplication to NBTI;Kaczer;IEEE Electron Device Lett.,2010
2. TCAD simulation of interface traps related variability in bulk decananometer mosfets;Velayudhan,2014
3. Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review;Gerrer;Microelectron. Reliab.,2014
4. A comprehensive model for PMOS NBTI degradation: recent progress;Alam;Microelectron. Reliab.,2007
5. The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes;Kaczer,2012
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献