Bevel contamination management in 3D integration by localized SiO2 deposition-Reference-Cited by-同舟云学术

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Bevel contamination management in 3D integration by localized SiO2 deposition

Published:2022-09 Issue: Volume:265 Page:111875
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Boulard F.,Gros V.,Porzier C.,Brunet L.,Lapras V.,Fournel F.,Truffier-Boutry D.,Autillo D.,Ruault P.,Keovisai M.,Posseme N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers;Brunet,2016

2. A review on opportunities brought by 3D-monolithic integration for CMOS device and digital circuit;Andrieu,2018

3. Breakthroughs in 3D sequential technology;Brunet,2018

4. Area and cost analysis of the mixed signal circuits in a novel monolithic 3D process;Rikan;Midwest Symposium on Circuits and Systems,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer;Electronics;2024-04-26

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