Nature and location of interface traps in RF LDMOS due to hot carriers-Reference-Cited by-同舟云学术

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Nature and location of interface traps in RF LDMOS due to hot carriers

Published:2004-04 Issue:1-4 Volume:72 Page:71-75
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Nigam T.,Shibib A.,Xu S.,Safar H.,Steinberg L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. MTT-S Digest,2001

2. J.A. Herbsomer et al., 32nd European Microwave Conference Proceedings (2001)

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