Interfacial reactions of Gd- and Nb-oxide based high-k layers deposited by aqueous chemical solution deposition-Reference-Cited by-同舟云学术

Interfacial reactions of Gd- and Nb-oxide based high-k layers deposited by aqueous chemical solution deposition

Published:2011-07 Issue:7 Volume:88 Page:1338-1341
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Dewulf D.,Peys N.,Van Elshocht S.,Rampelberg G.,Detavernier C.,De Gendt S.,Hardy A.,Van Bael M.K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

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4. Aqueous Chemical Solution Deposition

5. High dielectric constant gate oxides for metal oxide Si transistors

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