Characterization of chemical bonding features and defect state density in HfSiOx Ny/SiO2 gate stack-Reference-Cited by-同舟云学术

Characterization of chemical bonding features and defect state density in HfSiOx Ny/SiO2 gate stack

Published:2007-09 Issue:9-10 Volume:84 Page:2386-2389
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ohta A.,Munetaka Y.,Tsugou A.,Makihara K.,Murakami H.,Higashi S.,Miyazaki S.,Inumiya S.,Nara Y.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. For example: ”High Dielectric Constant Material”, Eds H. R. Huff and D. C. Gilmer (2004, Springer).

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Application of HfSiON as a gate dielectric material

4. M. Koyama, A. Kaneko, T. Ino, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashima, M. Suzuki, C. Hongo, S. Inumiya, M. Takayanagi, A. Nishiyama, IEEE IEDM Tech Dig. 2002, 847.

5. K. Sekine, S. Inumiya, M. Sato, A. Kaneko, K. Eguchi, Y. Tsunashima, IEEE IEDM Tech. Dig. 2003, 103.

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