Fully CMOS-compatible top-down fabrication of sub-50nm silicon nanowire sensing devices-Reference-Cited by-同舟云学术

Fully CMOS-compatible top-down fabrication of sub-50nm silicon nanowire sensing devices

Published:2014-04 Issue: Volume:118 Page:47-53
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Georgiev Yordan M.,Petkov Nikolay,McCarthy Brendan^ORCID,Yu Ran,Djara Vladimir,O’Connell Dan,Lotty Olan,Nightingale Adrian M.,Thamsumet Nuchutha,deMello John C.,Blake Alan^ORCID,Das Samaresh,Holmes Justin D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

2. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

3. Fabrication of silicon nanowire devices for ultrasensitive, label-free, real-time detection of biological and chemical species

4. Design Considerations of Silicon Nanowire Biosensors

5. Towards the silicon nanowire-based sensor for intracellular biochemical detection

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