Author:
Lucovsky G.,Seo H.,Lee S.,Fleming L.B.,Ulrich M.D.,Lüning J.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. J-L. Autron, D. Munteanu, M. Houssa: in High-k Gate Dielectrics (Inst. of Physics, Bristol, 2004) Chap. 3.4.
2. Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics
3. Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
4. G. Lucovsky, H. Seo, S. Lee, L.B. Fleming, M.D. Ulrich, et al., Jap. J. Appl. Phys. 46 (2007) in press.
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献