Suppressed charge trapping characteristics of (NH4)2Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric-Reference-Cited by-同舟云学术

Suppressed charge trapping characteristics of (NH4)2Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric

Published:2017-06 Issue: Volume:178 Page:240-244
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Han Hoon Hee,Lim Donghwan,Sergeevich Andrey Sokolov,Jeon Yu-Rim,Lee Jae Ho,Son Seok Ki,Choi Changhwan

Funder

Ministry of Education, Science and Technology

MOTIE

Korea Semiconductor Research Consortium

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

2. Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT

3. Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic Ron E/D-mode GaN HEMTs

4. Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

5. Sulphide passivation of GaN based Schottky diodes

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1. Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors;Energies;2023-03-24

2. Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2;Solid-State Electronics;2018-11

3. A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps;Japanese Journal of Applied Physics;2018-02-20